NOT KNOWN FACTS ABOUT N TYPE GE

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the construction is cycled as a result of oxidizing and annealing stages. Mainly because of the preferential oxidation of Si above Ge [68], the initial Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas o